Title: Process Engineer to support germanium laser project
Location: Silicon Valley / Stanford
Education: Ph.D. in Electrical Engineering with emphasis on semiconductor devices physics or applied physics with similar specialization.
Job description: Candidate will work with a research team in the electrical engineering department in the Stanford University which is developing a laser using group IV semiconductors. Lasing in a germanium diode fabricated on a silicon wafer has been demonstrated by APIC in partnership with MIT in 2012. As the next step, APIC is conducting research with a selected team in Stanford University to improve the efficiency of this laser. Candidate selected for this position will work with this team in Stanford to expedite the development and transfer the technology to APIC concurrently. The candidate will work out of the Silicon Valley office of APIC located in Los Altos, California a short drive away from the Stanford University. His position will require hands-on research work in device fabrication and simulation of the device targeted for development.
The candidate is expected to have hands-on experience in semiconductor device fabrication and theoretical analysis of semiconductor devices. In depth knowledge of quantum physics as it relates to band structure of semiconductor is essential for this position. Measurement laboratory experience with optical systems will be highly desired. Record of publications in peer reviewed technical journals and conferences will be sought to assess innovative thinking and presentation capabilities of the candidate.